V3023 EMMICRO [EM Microelectronic - MARIN SA], V3023 Datasheet - Page 2

• Manufacturer Part Number: V3023
• Description: Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration
• Manufacturer: EMMICRO [EM Microelectronic - MARIN SA]

Absolute Maximum Ratings
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Electrical Characteristics
V
Note 1: With PFO = 0 (V
Note 2: All other inputs to V
Note 3: At a give temperature.
Note 4: See Fig. 4
Copyright © 2004, EM Microelectronic-Marin SA
Parameter
Standby current (note 1)
Dynamic current (note 2)
Output low voltage
Output low voltage
Inputs and Outputs
Input logic low
Input logic high
Output logic low
Output logic high
Pullup on SYNC
Input leakage
Output tri-state leakage
Oscillator Characteristics
Starting voltage
Frequency Characteristics
Start-up time
Frequency tolerance
Frequency stability
Temperature stability
Aging
PF activation voltage
PF hysteresis
Parameter
Maximum voltage at V
Max. voltage at remaining pins V
Min. voltage on all pins
Maximum storage temperature T
Minimum storage temperature T
Maximum electrostatic
discharge to MIL-STD-883C
method 3015.7 with ref. to V
Maximum soldering conditions T
Shock resistance
IRQ (open drain)
DD
= 5.0V ±10%, V
With PFO = 1 (V
R
SS
= 0V, T
DD
SS
DD
) all I/O pads can be tri-state, tested.
), CS = 1 (V
DD
A
SS
=-40 to +85°C, unless otherwise specified
and all outputs open.
Symbol
V
Symbol
V
STOmax
V
STOmin
DDmax
V
V
Smax
Smax
V
T
V
V
V
V
∆f/f
max
I
V
min
I
V
V
I
f
t
I
t
I
DD
DD
STA
STA
STA
PFL
LS
TS
sta
sta
IN
ag
OL
OL
OL
OH
IH
IL
H
DD
0.3ms, ½ sine
) and all other I/O pads fixed to V
250°C x 10s
V
V
Conditions
V
Test Conditions
V
V
I
I
T
T
I
I
T
V
V
T
T
2.0 ≤ V
addr. 10 hex = 00 hex
T
CS = 4 MHz, RD = V
CS = 1
DD
WR = V
SS
SS
+125°C
OL
OL
OL
OH
5000 g.
1000V
A
A
A
A
A
A
DD
DD
ILS
SS
-55°C
= +25°C
= +25°C
= +25°C
≥ +25°C
= +25°C addr. 10 hex = 00 hex
= +25°C, first year
= 8 mA
+ 7.0V
– 0.3V
= 1 mA, V
= 6 mA
+ 0.3V
= 6 mA
< V
= 3 V, PF = 0
= 5 V, PF = 0
= 0.8 V
Table 1
DD
IN
DD
< V
≤ 5.5 V (note 3)
DD
DD
= 2 V
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
2
Parameter
Operating temperature
Logic supply voltage
Supply voltage dv/dt
(power-up & down)
Decoupling capacitor
SS
DD
or V
0.8 V
SS
Min
150
2.4
20
: same standby current, not tested.
2
DD
Symbol
dv/dt
(note 4)
see Fig.5
0.5 V
V
T
Typ
DD
100
210
1.2
2.5
A
10
10
2
1
1
DD
www.emmicroelectronic.com
Min
-40
2.0
0.2 V
1000
1000
Max
251
1.5
0.4
0.4
0.4
10
15
±5
5
V3023
Typ
100
5.0
DD
Max
+85
ppm/year
5.5
6
ppm/V
Unit
ppm
ppm
mA
mV
Table 2
µA
µA
µA
nA
nA
Table 3
V
V
V
V
V
V
V
V
V
s
Unit
V/µs
°C
nF
V