SI1902DL-T1 VISHAY [Vishay Siliconix], SI1902DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1902DL-T1
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71080
S-51415–Rev. H, 03-Apr-06
TYPICAL CHARACTERISTICS T
1.0
0.8
0.6
0.4
0.2
0.0
0.1
5
4
3
2
1
0
1
0.0
0.0
0.0
V
I
D
DS
Surge-Drain Diode Forward Voltage
= 0.66 A
On-Resistance vs. Drain Current
0.2
= 10 V
0.2
V
0.2
SD
T
Q
J
g
V
= 150 °C
– Source-to-Drain Voltage (V)
I
–
0.4
GS
D
Total Gate Charge (nC)
Gate Charge
– Drain Current (A)
= 2.5 V
0.4
0.4
0.6
0.6
0.8
A
V
0.6
= 25 °C, unless otherwise noted
GS
T
0.8
J
= 4.5 V
= 25 °C
1.0
0.8
1.0
1.2
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
1.0
0.8
0.6
0.4
0.2
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 0.66 A
= 4.5 V
4
1
V
T
0
V
DS
J
C
GS
– Junction T emperature (°C)
oss
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Capacitance
25
8
2
C
50
Vishay Siliconix
iss
12
I
3
75
D
Si1902DL
= 0.66 A
www.vishay.com
100
16
4
125
150
20
5
3