SI1902DL-T1 VISHAY [Vishay Siliconix], SI1902DL-T1 Datasheet - Page 2

no-image

SI1902DL-T1

Manufacturer Part Number
SI1902DL-T1
Description
Dual N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1902DL-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1902DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
62 955
Part Number:
SI1902DL-T1-E3
Manufacturer:
VISHAY
Quantity:
112
Part Number:
SI1902DL-T1-E3
Manufacturer:
VISHAY
Quantity:
523
Part Number:
SI1902DL-T1-E3
Manufacturer:
VISHAY
Quantity:
1 015
Part Number:
SI1902DL-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI1902DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1902DL-T1-E3
0
Company:
Part Number:
SI1902DL-T1-E3
Quantity:
70 000
Part Number:
SI1902DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1902DL-T1-GE3
0
Si1902DL
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
TYPICAL CHARACTERISTICS T
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery
Time
b
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
a
a
V
DS
Output Characteristics
a
V
– Drain-to-Source Voltage (V)
GS
1.0
J
= 5 thru 2.5 V
= 25 °C, unless otherwise noted
a
1.5
Symbol
V
r
I
DS(on)
t
t
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
f
g
2.0
A
1.5 V
= 25 °C, unless otherwise noted
2 V
1 V
V
I
D
2.5
DS
V
≅ 0.5 A, V
I
DS
= 10 V, V
F
V
V
V
V
= 0.23 A, di/dt = 100 A/µs
V
V
V
I
V
DS
= 16 V
S
DS
GS
GS
DS
DS
DS
DD
= 0.23 A, V
Test Conditions
3.0
= 0 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
≥ 5 V, V
= 16 V, V
= 10 V, R
GEN
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
GS
D
GS
D
D
D
GS
GS
= 250 µA
L
= 0.66 A
= 0.66 A
= 0.40 A
= ± 12 V
= 4.5 V
= 20 Ω
= 0 V
= 0 V
J
D
= 85°C
= 0.66 A
G
= 6 Ω
1.0
0.8
0.6
0.4
0.2
0 .0
0.0
Min
0.6
1.0
0 .5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
25 °C
0.320
0.560
1.0
0.06
0.30
Typ
T
1.5
0.8
0.8
10
16
10
10
20
C
= 125 °C
S-51415–Rev. H, 03-Apr-06
Document Number: 71080
1.5
± 100
0.385
0.630
Max
1.5
1.2
1.2
20
30
20
20
40
1
5
- 55 °C
2.0
Unit
nA
µA
nC
ns
Ω
V
A
S
V
2.5

Related parts for SI1902DL-T1