tpcs8212 TOSHIBA Semiconductor CORPORATION, tpcs8212 Datasheet - Page 3

• Manufacturer Part Number: tpcs8212
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
GS
3
= 6 A, V
(Ta = 25°C)
= ±10 V, V
= 20 V, V
= 10 V, I
= 2.0 V, I
= 2.5 V, I
= 4.0 V, I
= 10 V, I
= 10 V, V
∼ − 16 V, V
5 V
0 V
Test Condition
Test Condition
GS
w
V
D
D
GS
GS
D
D
D
DD
GS
GS
= 10 μs
GS
= 200 μA
= 3.0 A
DS
= 0 V
= 4.2 A
= 4.2 A
= 4.8 A
⎯
= 0 V
= −12 V
∼ − 10 V
= 0 V
= 0 V, f = 1 MHz
= 5 V, I
= 0 V
I
D
= 3 A
D
= 6 A
V
OUT
Min
Min
0.5
5.5
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
1590
Typ.
Typ.
180
200
6.4
3.5
4.5
26
21
16
11
22
10
42
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCS8212
2007-01-16
−1.2
Max
Max
±10
1.2
10
45
29
24
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V