tpcs8212 TOSHIBA Semiconductor CORPORATION, tpcs8212 Datasheet
tpcs8212
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tpcs8212 Summary of contents
Page 1
... GSS 1.1 D (1) P 0. 0.6 D (1) P 0.35 D ( 0.075 150 °C ch −55~150 T °C stg 1 TPCS8212 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 2007-01-16 ...
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... R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Part No. (or abbreviation code) b) Device mounted on a glass-epoxy board ( Ω TPCS8212 Max Unit 114 °C/W 167 208 °C/W 357 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2007-01-16 ...
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... Q g ∼ − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCS8212 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ 20 ⎯ 8 ⎯ 0.5 1.2 ⎯ ⎯ ⎯ ...
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... Drain-source voltage V 0.8 0.6 0.4 0 Gate-source voltage V 100 0.1 4 TPCS8212 I – Common source Ta = 25°C Pulse test 1.7 1 – Common source Ta = 25°C Pulse test 1 ...
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... Drain-source voltage V 1.6 1.2 0.8 0.4 0 −80 −40 100 Dynamic input/output characteristics 20 (Note 2a (Note 2b 200 0 5 TPCS8212 I – −1 V Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1.0 1.2 ( – Common source 200 μA ...
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... I D max (pulse 0.5 0.3 0.1 * Single pulse Ta = 25°C 0.05 0.03 Curves must be derated linearly with increase in temperature. V DSS max 0.01 0.01 0.03 0.1 0 Drain-source voltage V (V) DS − 0 Pulse width t (S) w (Note 3b) 30 100 6 TPCS8212 (4) (3) (2) (1) Single pulse 100 1000 2007-01-16 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCS8212 20070701-EN 2007-01-16 ...