hm5216805 Renesas Electronics Corporation., hm5216805 Datasheet - Page 17

• Manufacturer Part Number: hm5216805
• Description: 16 M Lvttl Interface Sdram 100 Mhz/83 Mhz 1-mword 8-bit 2-bank/2-mword 4-bit 2-bank - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

From [ROW ACTIVE]
To [DESL], [NOP] or [BST]: These commands result in no operation.
To [READ], [READ A]: A read operation starts. (However, an interval of t
To [WRIT], [WRIT A]: A write operation starts. (However, an interval of t
To [ACTV]: This command makes the other bank active. (However, an interval of t
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]: These commands set the synchronous DRAM to precharge mode. (However, an
interval of t
From [READ]
To [DESL], [NOP]: These commands continue read operations until the burst operation is completed.
To [BST]: This command stops a full-page burst.
To [READ], [READ A]: Data output by the previous read command continues to be output. After CAS
latency, the data output resulting from the next command will start.
To [WRIT], [WRIT A]: These commands stop a burst read, and start a write cycle.
To [ACTV]: This command makes other banks bank active. (However, an interval of t
Attempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]: These commands stop a burst read, and the synchronous DRAM enters precharge
mode.
From [READ with AUTO-PRECHARGE]
To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and
the synchronous DRAM then enters precharge mode.
To [ACTV]: This command makes other banks bank active. (However, an interval of t
Attempting to make the currently active bank active results in an illegal command.
RAS
is required.)
HM5216805 Series, HM5216405 Series
RCD
RCD
is required.)
is required.)
RRD
RRD
RRD
is required.)
is required.)
is required.)
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