lh5p8128 Sharp Microelectronics of the Americas, lh5p8128 Datasheet - Page 4

• Manufacturer Part Number: lh5p8128
• Manufacturer: Sharp Microelectronics of the Americas

LH5P8128
AC ELECTRICAL CHARACTERISTICS
(T
NOTES:
1. In order to initialize the circuit, CE
2. AC characteristics are measured at t
3. AC characteristics are measured at the following condition (see
4. Address is latched at the negative edge of CE
5. Measured with a load equivalent to 2TTL + 100 pF.
6. Data is latched at the positive edge of W/R or at the positive
4
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command setup time
Read command hold time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Output enable from end of write
Chip disable to output in High-Z
Output disable to output in High-Z
Write enable to output in High-Z
OE setup time
OE hold time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write
Data setup time from CE
Data hold time from write
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
Refresh command hold time
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width
(Auto refresh)
Refresh precharge time
(Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh
precharge (Self refresh)
A
should be kept at V
least 8 dummy cycles.
figure at right).
edge of CE
edge of CE
= 0 to +70 C, V
PARAMETER
2
1
.
or at the negative edge of CE
IL
for 100 s after power-up, followed by at
CC
= 5.0 V 10%)
1
should be kept at V
T
= 5 ns.
SYMBOL
2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RMW
t
t
t
t
t
t
t
t
t
.
WCH
DHW
WHZ
t
WCS
DSW
t
t
t
RCS
RCH
OEA
WLZ
OHZ
OES
OEH
DSC
DHC
RHC
t
CEA
OLZ
CHZ
REF
t
RFD
FAP
t
FAS
FRS
CLZ
WP
RC
CE
t
AH
AS
t
FC
FP
1
P
T
or at the positive
IH
8,000
MIN.
100
165
100
140
60
40
15
20
10
30
30
40
25
25
15
30
30
30
LH5P8128-60
or CE
0
0
0
0
0
0
0
0
3
1,2,3
2
10,000
8,000
MAX.
60
25
20
20
20
35
8
OUTPUT
INPUT
8,000
MIN.
130
195
130
160
80
40
20
20
10
30
30
50
30
30
15
40
30
30
LH5P8128-80
0
0
0
0
0
0
0
0
3
CMOS 1M (128K
Figure 4. AC Characteristics
10,000
8,000
MAX.
80
30
25
25
25
35
8
8,000
MIN.
160
235
100
160
190
50
25
20
10
30
30
60
35
35
15
50
30
30
LH5P8128-10
0
0
0
0
0
0
0
0
3
2.4 V
0.8 V
10,000
8) Pseudo-Static RAM
8,000
MAX.
100
35
30
30
30
35
8
0.8 V
2.2 V
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2.6 V
0.6 V
NOTE
5P8128-3
4
4
5
5
6
6
6
6