SI4808DY-T1 VISHAY [Vishay Siliconix], SI4808DY-T1 Datasheet - Page 5

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SI4808DY-T1

Manufacturer Part Number
SI4808DY-T1
Description
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Quantity
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SI4808DY-T1
Quantity:
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Document Number: 71157
S-03951—Rev. B, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
0.1
0.01
200
160
120
20
10
0.1
80
40
1
0
2
1
0
0
10
Reverse Current vs. Junction Temperature
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
V
6
DS
30 V
- Drain-to-Source Voltage (V)
50
T
C
J
oss
- Temperature (_C)
Capacitance
12
10
75
-3
24 V
Normalized Thermal Transient Impedance, Junction-to-Foot
18
100
24
125
Square Wave Pulse Duration (sec)
10
150
30
-2
10
-1
10
1
0.0
0.3
T
J
V
= 150_C
Forward Voltage Drop
F
- Forward Voltage Drop (V)
1
0.6
Vishay Siliconix
T
J
= 25_C
0.9
Si4808DY
SCHOTTKY
1.2
www.vishay.com
MOSFET
10
1.5
2-5

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