SI4808DY-T1 VISHAY [Vishay Siliconix], SI4808DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4808DY-T1
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4808DY
Vishay Siliconix
www.vishay.com
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
20
10
0.01
1
- 50
0.0
0.1
2
1
10
-4
- 25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
Single Pulse
V
SD
0
T
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
J
= 150_C
- Temperature (_C)
25
10
-3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
100
T
10
J
-2
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.04
0.03
0.02
0.01
0.00
50
40
30
20
10
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
2
-2
10
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
GS
DM
Single Pulse Power
JM
- Gate-to-Source Voltage (V)
10
- T
-1
t
A
Time (sec)
1
4
I
D
= P
t
2
= 7.5 A
DM
Z
1
thJA
thJA
100
S-03951—Rev. B, 26-May-03
t
t
1
2
6
(t)
Document Number: 71157
= 93_C/W
10
MOSFET
8
600
100
600
10