SI4511DY-E3 VISHAY [Vishay Siliconix], SI4511DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4511DY-E3
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4511DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
40
10
1
−50
0.00
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
− Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
− Temperature (_C)
= 250 mA
25
50
0.6
75
0.8
0.01
100
0.1
10
100
1
0.1
T
J
= 25_C
1.0
r
Limited
DS(on)
125
I
D(on)
Single Pulse
T
C
Limited
V
= 25_C
150
1.2
DS
− Drain-to-Source Voltage (V)
Safe Operating Area
1
BV
DSS
Limited
10
0.05
0.04
0.03
0.02
0.01
0.00
I
30
25
20
15
10
DM
5
0
10
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0
Limited
−2
On-Resistance vs. Gate-to-Source Voltage
100
10
V
1
GS
−1
I
D
− Gate-to-Source Voltage (V)
= 3 A
Single Pulse Power
Time (sec)
2
1
S-41496—Rev. B, 09-Aug-04
I
D
Document Number: 72223
3
10
= 9.6 A
N−CHANNEL
100
4
600
5