SI4511DY-E3 VISHAY [Vishay Siliconix], SI4511DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4511DY-E3
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72223
S-41496—Rev. B, 09-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
0.015
0.010
0.005
0.000
40
32
24
16
10
8
0
8
6
4
2
0
0.00
0
0
V
I
D
DS
0.25
3
= 9.6 A
On-Resistance vs. Drain Current
= 10 V
V
GS
V
8
DS
6
Q
= 4.5 V
0.50
Output Characteristics
g
− Drain-to-Source Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
9
Gate Charge
16
V
0.75
GS
= 10 thru 4 V
12
1.00
24
15
1.25
V
GS
18
= 10 V
32
1.50
21
3 V
2 V
1.75
40
24
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
8
0
0
−50
0.0
0
On-Resistance vs. Junction Temperature
−25
V
I
C
D
0.5
GS
rss
= 9.6 A
V
V
= 10 V
4
DS
GS
T
Transfer Characteristics
J
0
C
1.0
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
oss
Capacitance
25
T
25_C
C
8
1.5
= 125_C
Vishay Siliconix
C
50
iss
2.0
12
75
N−CHANNEL
Si4511DY
2.5
100
−55_C
www.vishay.com
16
3.0
125
150
3.5
20
3