IRLR/U2905 IRF [International Rectifier], IRLR/U2905 Datasheet - Page 2

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IRLR/U2905

Manufacturer Part Number
IRLR/U2905
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

ƒ
IRLR/U2905
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
I
I
V
t
Q
t
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
SM
rr
on
GSS
d(on)
r
d(off)
f
S
D
V
fs
S
(BR)DSS
DS(on)
GS(th)
SD
max. junction temperature. ( See fig. 11 )
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
R
T
Pulse width 300µs; duty cycle 2%.
g
gs
gd
I
2
(BR)DSS
SD
J
DD
G
= 25 , I
= 25V, starting T
175°C
25A, di/dt 270A/µs, V
/ T
J
AS
Internal Drain Inductance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25A. (See Figure 12)
J
= 25°C, L =470µH
Parameter
Parameter
DD
V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
1.0
–––
–––
55
21
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Caculated continuous current based on maximum allowable
Uses IRLZ44N data and test conditions.
This is applied for I-PAK, L
junction temperature;
0.070 –––
lead and center of die contact.
1700 –––
–––
–––
–––
––– 0.027
––– 0.030
––– 0.040
–––
–––
–––
–––
–––
400
150
–––
210
–––
–––
–––
–––
7.5
4.5
11
84
15
80
26
-100
–––
42 …
–––
–––
250
100
–––
–––
–––
–––
–––
–––
120
320
2.0
8.6
1.3
–––
25
48
25
160
V/°C
nC
nC
nH
µA
nA
pF
ns
ns
W
V
V
S
A
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „‡
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5‡
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25A
= 25A
= 25°C, I
Package limitation current = 20A.
= 25°C, I
= 1.1
= 3.4
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 16V
= -16V
= 44V
= 5.0V, See Fig. 6 and 13 „‡
= 28V
= 25V
= 0V
S
of D-PAK is measured between
GS
, I
D
See Fig. 10 „‡
V
F
S
D
D
D
= 250µA
D
D
GS
Conditions
Conditions
= 25A
GS
GS
= 25A, V
= 250µA
= 25A‡
= 25A „
= 25A „
= 21A „
= 5.0V
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D

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