2SK1516 HITACHI [Hitachi Semiconductor], 2SK1516 Datasheet - Page 6

• Manufacturer Part Number: 2SK1516
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SK1515, 2SK1516
6
5,000
2,000
1,000
500
400
300
200
100
500
200
100
50
0
0.2
di/dt = 100 A/ s, Ta = 25°C
V
Pulse Test
GS
V
Dynamic Input Characteristics
Reverse Drain Current I
Body to Drain Diode Reverse
DS
0.5
8
= 0
Gate Charge Qg (nc)
V
250 V
100 V
DD
Recovery Time
1
16
= 400 V
V
DD
2
= 100 V
250 V
400 V
24
5
I
DR
D
32
V
GS
= 7 A
10
(A)
40
20
20
16
12
8
4
0
5,000
1,000
500
200
100
100
50
20
10
10
5
0.2
5
0
V
PW = 2 s, duty < 1%
GS
Drain to Source Voltage V
= 10 V V
0.5
Switching Characteristics
10
Drain to Source Voltage
Typical Capacitance vs.
t
Drain Current I
r
t
f
1
DD
20
= 30 V
Coss
Crss
•
Ciss
•
t
2
d (off)
t
d (on)
30
D
5
(A)
V
f = 1 MHz
GS
DS
40
10
= 0
(V)
20
50