2SK1516 HITACHI [Hitachi Semiconductor], 2SK1516 Datasheet - Page 5

• Manufacturer Part Number: 2SK1516
• Description: Silicon N-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

10
8
6
4
2
0
2.0
1.6
1.2
0.8
0.4
Drain to Source Saturation Voltage
0
–40
Gate to Source Voltage V
vs. Gate to Source Voltage
4
V
Pulse Test
GS
Static Drain to Source on State
Case Temperature T
Resistance vs. Temperature
= 10 V
0
8
40
I
D
12
I
= 10 A
D
= 2 A
10 A
5 A
Pulse Test
80
GS
16
2, 5 A
C
(V)
(°C)
120
20
160
0.05
0.5
50
20
10
0.5
0.2
0.1
5
2
1
0.1
5
2
1
0.5
V
Pulse Test
DS
Pulse Test
0.2
Forward Transfer Admittance
Static Drain to Source on State
= 20 V
1
Resistance vs. Drain Current
Drain Current I
Drain Current I
vs. Drain Current
0.5
2
T
C
2SK1515, 2SK1516
= –25°C
1
25°C
75°C
5
V
GS
2
D
= 10 V
10
D
(A)
(A)
20
5
15 V
10
50
5