IRF4N60 SUNTAC [Suntac Electronic Corp.], IRF4N60 Datasheet - Page 2

• Manufacturer Part Number: IRF4N60
• Description: POWER MOSFET
• Manufacturer: SUNTAC [Suntac Electronic Corp.]

ORDERING INFORMATION
....................IRF4N60..............................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-Forward
Gate-Source Leakage Current-Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Drain Inductance
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(V
(V
(V
(V
(V
(Measured from the drain lead 0.25” from package to center of die)
(Measured from the source lead 0.25” from package to source bond pad)
GS
DS
gsf
gsr
DS
* Pulse Test: Pulse Width
** Negligible, Dominated by circuit inductance
= 20 V, V
= 0 V, I
=600 V, V
= 20 V, V
= V
GS
Part Number
, I
IRF4N60FP
D
D
= 250
= 250
DS
DS
GS
= 0 V)
= 0 V)
= 0 V)
A)
A)
DS
J
Characteristic
= 50 V, I
300µs, Duty Cycle
= 25 .
GS
= 10 V, I
D
= 2.0 A) *
(V
(V
(V
D
DD
DS
DS
= 2.0A) *
d
TO-220 Full Package
= 300 V, I
= 480 V, I
IS
= 25 V, V
f = 1.0 MHz)
R
V
V
/d
(I
GS
G
GS
S
2%
t
Package
= 9.1 ) *
= 100A/µs)
= 4.0 A,
= 10 V)*
= 10 V,
D
D
GS
= 4.0 A,
= 4.0 A,
= 0 V,
Symbol
V
R
V
I
(BR)DSS
I
t
t
I
C
GSSF
GSSR
C
C
Q
Q
V
g
GS(th)
DS(on)
d(on)
d(off)
DSS
Q
L
L
t
t
t
t
on
FS
oss
SD
rr
iss
rss
r
f
gs
gd
D
S
g
Min
600
2.0
2.5
................1.5............... 2 .4
POWER MOSFET
CIRF4N60
Typ
520
125
655
8.0
7.0
5.0
2.7
2.0
4.5
7.5
12
19
10
**
IRF4N60
Max
-100
100
730
180
0.1
4.0
1.5
20
20
10
40
20
10
Page 2
Units
mhos
mA
nA
nC
nC
nC
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
ns
nA
V
V
V