IRF7N60FP SUNTAC [Suntac Electronic Corp.], IRF7N60FP Datasheet
IRF7N60FP
Related parts for IRF7N60FP
IRF7N60FP Summary of contents
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GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy ...
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... ORDERING INFORMATION Part Number IRF7N60...............................................TO-220 ....................IRF7N60FP ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 600 480 125 ) Gate-Source Leakage Current-Forward ( gsf DS Gate-Source Leakage Current-Reverse ...
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TYPICAL ELECTRICAL CHARACTERISTICS IRF7 N 60 POWER MOSFET Page 3 ...
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IRF7 N 60 POWER MOSFET Page 4 ...
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IRF7 N 60 POWER MOSFET Page 5 ...
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PACKAGE DIMENSION Front View Front View TO-220 A c1 φ Side View TO-220FP Side View Back View IRF7N60 P MOSFET OWER ...