hm658512a HITACHI, hm658512a Datasheet

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hm658512a

Manufacturer Part Number
hm658512a
Description
Psram 512-kword 8-bit Refresh
Manufacturer
HITACHI
Datasheet

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Description
The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword
density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process
technology.
It offers low power data retention by self refresh mode. It also offers easy non multiplexed address
interface and easy refresh functions. HM658512A is suitable for handy systems which work with battery
back-up systems.
The device is packaged in a small 525-mil SOP (460-mil body SOP) or a 8
of 1.2 mm, or a 600-mil plastic DIP. High density custom cards made of Tape Carrier Packages are also
available.
Features
Single 5 V (±10%)
High speed
Low power
Directly TTL compatible
All inputs and outputs
Simple address configuration
Non multiplexed address
Refresh cycle
Access time
CE access time: 70/80/100 ns (max)
Cycle time
Random read/write cycle time:
115/130/160 ns (min)
Active: 250 mW (typ)
Standby: 200 µW (typ)
2048 refresh cycles: 32 ms
4 M PSRAM (512-kword
HM658512A Series
2 k Refresh
8-bit)
20 mm TSOP with thickness
8-bit. It realizes higher
ADE-203-218C(Z)
Nov. 1997
Rev. 3.0

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hm658512a Summary of contents

Page 1

... It offers low power data retention by self refresh mode. It also offers easy non multiplexed address interface and easy refresh functions. HM658512A is suitable for handy systems which work with battery back-up systems. The device is packaged in a small 525-mil SOP (460-mil body SOP ...

Page 2

... HM658512A Series Easy refresh functions Address refresh Automatic refresh Self refresh Ordering Information Type No. HM658512ALP-7 HM658512ALP-8 HM658512ALP-10 HM658512ALP-7V HM658512ALP-8V HM658512ALP-10V HM658512ALFP-7 HM658512ALFP-8 HM658512ALFP-10 HM658512ALFP-7V HM658512ALFP-8V HM658512ALFP-10V HM658512ALTT-7 HM658512ALTT-8 HM658512ALTT-10 HM658512ALTT-7V HM658512ALTT-8V HM658512ALTT-10V HM658512ALRR-7 HM658512ALRR-8 HM658512ALRR-10 HM658512ALRR-7V HM658512ALRR-8V HM658512ALRR-10V 2 Access time Package ...

Page 3

... (Top view) HM658512ALTT Series (Top view) HM658512A Series V CC A15 A17 WE A13 A8 A9 A11 OE/RFSH A10 CE I/O7 I/O6 I/O5 I/O4 I/ A15 30 A17 A13 A11 24 OE/RFSH ...

Page 4

... OE/RFSH A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 Pin Description Pin name Function A0 to A18 Address I/O0 to I/O7 Input/Output CE Chip enable OE/RFSH Output enable/Refresh WE Write enable V Power supply CC V Ground SS 4 HM658512ALRR Series (Top view) A18 1 A16 2 A14 3 A12 ...

Page 5

... Block Diagram A0 A10 I OE/RFSH WE Address Row Latch Decoder Control Input Data Control A11 Refresh Control Timing Pulse Gen. Read Write Control HM658512A Series Memory Matrix (2048 256) 8 Column I/O Column Decoder Address Latch Control A18 5 ...

Page 6

... HM658512A Series Pin Functions CE: Chip Enable (Input basic clock. RAM is active when CE is low, and is on standby when CE is high A18: Address Inputs (Input A10 are row addresses and A11 to A18 are column addresses. The entire addresses A0 to A18 are fetched into RAM by the falling edge of CE ...

Page 7

... OE function of OE/RFSH from the RFSH (3) t and t OHC OCD function. The t and t OHC OCD (4) Start the HM658512A operating by executing at least eight initial cycles (dummy cycles) at least 100 µs after the power voltage reaches 4.5 V-5.5 V after power-on. Function Table CE OE/RFSH ...

Page 8

... HM658512A Series Absolute Maximum Ratings Parameter Terminal voltage with respect to V Power dissipation Operating temperature Storage temperature Storage temperature under bias Note: 1. With respect Recommended DC Operating Conditions ( +70°C) Parameter Supply voltage Input voltage Note min = –3.0 V for pulse width 30 ns ...

Page 9

... LI I –10 — — — 0 2.4 — — Symbol Typ Max C — — 10 I/O HM658512A Series = Notes I min cyc Vin OE/RFSH = – 0.2 V, Vin OE/RFSH V – 0 – 0.2 V, Vin ...

Page 10

... HM658512A Series AC Characteristics ( +70°C, V Test Conditions Input pulse levels: 0.4 V, 2.4 V Input rise and fall time Timing measurement level: 0.8 V, 2.2 V Reference levels 2 Output load: 1 TTL Gate and C Parameter Random read or write cycle time Chip enable access time ...

Page 11

... RFS t — 32 — REF and t are sampled under the condition (min) and required to reset the internal self refresh RFS , CE and OE/RFSH must be kept high. If automatic refresh RFS HM658512A Series -10 Max Min Max Unit — 25 — ns — 0 — ns — 5 — ...

Page 12

... HM658512A Series Timing Waveform Read Cycle Address Valid A0 to A18 WE t RCS OE/RFSH Dout OHC t CEA t OEA t OLZ RCH t CHZ t OHZ Valid data out ...

Page 13

... Write Cycle (1) (OE high Address Valid A0 to A18 WE OE/RFSH Din t CLZ Dout Valid Data in t WHZ t OHZ t HM658512A Series OCD t OLZ OW 13 ...

Page 14

... HM658512A Series Write Cycle (2) (OE low Address Valid A0 to A18 WE t OHC OE/RFSH Din t CLZ Dout Valid data in t WHZ ...

Page 15

... OHC OE/RFSH Din t CLZ Dout Automatic Refresh Cycle CE t RFD t FP OE/RFSH t RWC CEA OEA Valid data in t OLZ t OHZ Valid data out FAP FAP FP HM658512A Series RCH WP t OCD CHZ ...

Page 16

... HM658512A Series Self Refresh Cycle CE t RFD t OE/RFSH Low V Data Retention Characteristics ( + This characteristics is guaranteed only for V-version. Parameter V for data retention CC Self refresh current Refresh setup time Operation recovery time FAS Symbol Min Typ V 3.0 — — ...

Page 17

... Rise time and fall time of power supply voltage must be smaller than 0.05 V/ms. Keep Regarding RFD 4. Input voltage should be lower than V Data Retention mode VDR OE/RFSH – 0.2 V during data retention mode and t , refer to AC characteristics. FP FAS RFS +1 data retention mode. CC HM658512A Series Vcc-0. FAS 0.2V t RFS 17 ...

Page 18

... HM658512A Series Package Dimensions HM658512ALP Series (DP-32) 42.50 Max 32 1 2.30 Max 2.54 0.25 18 41. 1.20 0.48 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 15.24 + 0.11 0.25 – 0.05 0 – 15 DP-32 — Conforms 5.1 g ...

Page 19

... HM658512ALFP Series (FP-32D) 20.45 20.95 Max 32 1 1.00 Max 1.27 0.40 0.08 0.15 0.38 0.06 Dimension including the plating thickness Base material dimension 17 16 0.10 M Hitachi Code JEDEC EIAJ Weight (reference value) HM658512A Series Unit: mm 14.14 0.30 1.42 0 – 8 0.80 0.20 FP-32D Conforms — 1 ...

Page 20

... HM658512A Series HM658512ALTT Series (TTP-32D) 20.95 21.35 Max 32 1 0.42 0.08 0.21 0.40 0.06 1.15 Max 0.10 Dimension including the plating thickness Base material dimension 1.27 M 11.76 0.80 0.20 0 – 5 0.50 Hitachi Code TTP-32D JEDEC Conforms EIAJ — Weight (reference value) 0.51 g Unit: mm 0.10 ...

Page 21

... HM658512ALRR Series (TTP-32DR) 20.95 21.35 Max 1 32 0.42 0.08 0.21 0.40 0.06 1.15 Max 0.10 Dimension including the plating thickness Base material dimension 16 17 1.27 M 11.76 Hitachi Code JEDEC EIAJ Weight (reference value) HM658512A Series Unit: mm 0.80 0.20 0 – 5 0.50 0.10 TTP-32DR Conforms — 0. ...

Page 22

... HM658512A Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’ ...

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