MCR22-6_06 ONSEMI [ON Semiconductor], MCR22-6_06 Datasheet - Page 2

• Manufacturer Part Number: MCR22-6_06
• Description: Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
• Manufacturer: ONSEMI [ON Semiconductor]

2. Pulse Width = 1.0 ms, Duty Cycle v 1%.
3. R
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (Note 3)
Gate Trigger Voltage (Continuous dc) (Note 3)
Gate Non−Trigger Voltage (Note 2)
Holding Current
Critical Rate of Rise of Off−State Voltage
(V
(I
(V
(V
(V
(V
Initiating Current = 200 mA
(T
GK
Symbol
V
I
V
I
V
I
TM
DRM
RRM
H
AK
AK
AK
AK
AK
C
DRM
RRM
TM
Current not included in measurement.
= 110 C)
= 1 A Peak)
= Rated V
= 6 Vdc, R
= 7 Vdc, R
= 12 Vdc, R
= 12 Vdc, Gate Open)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
DRM
L
L
L
= 100 W)
= 100 W)
= 100 W)
or V
RRM
; R
Characteristic
GK
= 1000 W)
(T
Voltage Current Characteristic of SCR
C
= 25 C unless otherwise noted.)
MCR22−6, MCR22−8
http://onsemi.com
I
Reverse Avalanche Region
RRM
Anode −
2
Reverse Blocking Region
T
T
T
T
T
T
T
T
T
at V
C
C
C
C
C
C
C
C
C
= −40 C
= −40 C
= −40 C
= 110 C
= 110 C
= 25 C
= 25 C
= 25 C
= 25 C
RRM
(off state)
on state
I
DRM
Symbol
dv/dt
V
+ Current
V
V
I
GT
I
, I
GD
TM
GT
H
RRM
Forward Blocking Region
I
H
V
Min
0.1
TM
−
−
−
−
−
−
−
−
−
−
(off state)
I
DRM
Typ
1.2
2.0
30
25
−
−
−
−
−
−
−
Anode +
at V
DRM
Max
200
200
500
1.7
0.8
1.2
5.0
10
10
−
−
+ Voltage
V/ms
Unit
mA
mA
mA
mA
V
V
V