MCR218-4 ONSEMI [ON Semiconductor], MCR218-4 Datasheet - Page 2

• Manufacturer Part Number: MCR218-4
• Description: Silicon Controlled Rectifiers Reverse Blocking Thyristors
• Manufacturer: ONSEMI [ON Semiconductor]

2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On-State Voltage (Note 2)
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Gate Non−Trigger Voltage
Holding Current
Critical Rate-of-Rise of Off-State Voltage
Symbol
V
I
V
I
V
I
(V
(I
(V
(V
(Rated 12 V, R
(V
(V
DRM
RRM
H
TM
DRM
RRM
TM
AK
D
D
D
D
= 12 V, R
= 12 V, R
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
= Rated V
= 16 A Peak)
= Rated V
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
L
L
DRM
L
= 100 Ohms)
= 100 Ohms)
DRM
= 100 Ohms, T
, Exponential Waveform, Gate Open, T
or V
RRM
, Gate Open)
Characteristic
Characteristic
J
= 125 C)
(T
Voltage Current Characteristic of SCR
MCR218−2, MCR218−4, MCR218−6
J
= 25 C unless otherwise noted.)
2%.
T
T
J
J
= 25 C
= 125 C
http://onsemi.com
J
= 125 C)
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
2
at V
RRM
(off state)
on state
I
DRM
Symbol
Symbol
+ Current
R
dv/dt
V
V
V
I
T
GT
I
qJC
, I
GD
TM
GT
H
L
RRM
Forward Blocking Region
I
H
V
TM
Min
0.2
(off state)
−
−
−
−
−
−
−
I
DRM
Max
Typ
260
100
2.0
1.5
10
16
−
−
−
−
Anode +
at V
DRM
Max
2.0
1.8
1.5
10
25
30
+ Voltage
−
−
V/ms
Unit
Unit
C/W
mA
mA
mA
mA
V
V
V
C