at-36408-tr1 ETC-unknow, at-36408-tr1 Datasheet - Page 2

• Manufacturer Part Number: at-36408-tr1
• Description: Common Emitter Output Power Transistor Class Phones
• Manufacturer: ETC-unknow

AT-36408 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Pulsed operation, pulse width = 577 sec, duty cycle = 12.5%.
3. Derate at 133.3 mW/ C for T
4. Using the liquid crystal technique, V
Electrical Specifications, T
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
Symbol
Symbol
the collector pins 3 and 6, where the lead contacts the circuit board.
“hot-spot” resolution.
P
H2
H3
BV
BV
BV
h
I
CEO
V
V
V
FE
T
out
C
P
T
I
EBO
CBO
CEO
STG
EBO
CBO
CEO
C
T
j
Freq. = 900 MHz, V
577 sec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified
Output Power
Collector Efficiency
2nd Harmonic
3rd Harmonic
Mismatch Tolerance, No Damage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Peak Power Dissipation
Junction Temperature
Storage Temperature
Parameter
[1]
[1]
[1]
Parameters and Test Conditions
C
CE
> 85 C. T
= 4.8 V, I
[1]
[2]
CE
= 4.5 V, I
C
= 25 C
[2, 3]
C
CQ
is defined to be the temperature of
= 50 mA, pulsed operation, pulse width =
c
=100 mA, T
[1]
Units
W
V
V
V
A
C
C
I
E
4-82
any phase, 2 sec duration
I
= 0.8 mA, open collector
C
I
j
= 4.0 mA, open emitter
C
=150 C, 1- 2
Maximum
V
= 20.0 mA, open base
Absolute
CE
-65 to 150
= 3 V, I
16.0
150
1.4
9.5
1.7
8.6
P
P
P
out
F
F
in
in
0
0
= +35 dBm
= +26 dBm
= +26 dBm
[1]
C
= 900 MHz
= 900 MHz
= 180 mA
V
m
CEO
= 5 V
Thermal Resistance
Units
dBm
dBc
dBc
—
%
V
V
V
A
jc
+34.0 +35.0
Min.
= 60 C/W
16.0
1.4
9.5
55
80
Typ. Max.
150
-50
-40
65
[4]
330
7:1
:
50