AT-42036-BLKG Avago Technologies US Inc., AT-42036-BLKG Datasheet

TRANS NPN BIPO 12V 80MA 36-SMD

AT-42036-BLKG

Manufacturer Part Number
AT-42036-BLKG
Description
TRANS NPN BIPO 12V 80MA 36-SMD
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of AT-42036-BLKG

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 2GHz ~ 4GHz
Gain
10dB ~ 13.5dB
Power - Max
600mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 35mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
4-SMD (36 micro-X)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
8GHz
Power Dissipation Pd
725mW
Dc Collector Current
80mA
Dc Current Gain Hfe
150
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-42036-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-42036
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-42036 is a general purpose NPN bipolar tran-
sistor that offers excellent high frequency performance.
The AT-42036 is housed in a cost effective surface mount
100 mil micro-X package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power ap-
plications. This device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in
the VHF, UHF, and microwave frequencies. An optimum
noise match near 50 Ω up to 1 GHz, makes this device
easy to use as a low noise amplifier.
The AT-42036 bipolar transistor is fabricated using
Avago’s 10 GHz f
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliabil-
ity are produced by the use of ion-implantation, self-
alignment techniques, and gold metalization in the fabri-
cation of this device.
T
Self-Aligned-Transistor (SAT) process.
Features
• High output power:
• High gain at 1 dB compression:
• Low noise figure:
• High gain-bandwidth product: 8.0 GHz typical f
• Cost effective ceramic microstrip package
36 micro-X Package
21.0 dBm typical P
20.5 dBm typical P
14.0 dB typical G
9.5 dB typical G
1.9 dB typical NF
1 dB
1 dB
O
1 dB
1 dB
at 2.0 GHz
at 4.0 GHz
at 2.0 GHz
at 2.0 GHz
at 4.0 GHz
T

Related parts for AT-42036-BLKG

AT-42036-BLKG Summary of contents

Page 1

... This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω GHz, makes this device easy to use as a low noise amplifier. The AT-42036 bipolar transistor is fabricated using Avago’ ...

Page 2

... Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more jc information ...

Page 3

... I (mA) C Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency 0.5 1.0 2.0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency mA 1dB 1dB (mA) C Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage 2.0 ...

Page 4

... A model for this device is available in the DEVICE MODELS section. AT-42036 Noise Parameters Freq. NF Γ O opt GHz dB Mag 0.1 1.0 .04 0.5 1.1 .04 1.0 1.3 .07 2.0 2.0 ...

Page 5

... Ordering Information Part Numbers No. of Devices AT-42036-BLKG 100 AT-42036-TR1G 1000 Device Orientation TOP VIEW 1 420 420 420 1 INDICATES PIN 1 ORIENTATION. Tape Dimensions COVER TAPE DESCRIPTION SYMBOL CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH ...

Related keywords