at-32032 Avago Technologies, at-32032 Datasheet - Page 10

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
Freq.
10.0
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1 – |S
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
12
Mag
0.751
0.322
0.181
0.160
0.094
0.068
0.055
0.032
0.075
0.148
0.243
0.354
0.464
0.555
0.636
21
|
22
k
|
|
F
2
2
dB
1.1
1.3
1.4
1.5
1.7
1.9
2.1
–1)
min
+ |D|
S
O
11
= 50 Ω, V
2
; D = S
Ang
-102
-114
-123
146
-26
-70
-84
-88
86
67
58
47
32
14
-5
Mag
0.29
0.25
0.26
0.31
0.37
0.45
0.52
11
S
CE
22 –
27.7
20.3
15.9
15.0
11.8
10.4
= 5 V, I
dB
-0.3
Γ
9.6
6.7
4.9
3.7
2.9
2.2
1.5
0.7
S
opt
12
S
21
Ang
-165
-133
-106
C
143
159
-84
69
= 10 mA
24.169
10.383
Mag
6.208
5.623
3.885
3.304
3.012
2.161
1.759
1.538
1.397
1.292
1.190
1.083
0.967
S
21
Common Emitter, Z
ohms
10.0
14.6
25.7
R
Ang
6.1
5.6
5.5
8.1
152
103
-24
-42
-61
-79
-96
n
85
82
68
60
56
34
14
-5
G
-37.1
-26.4
-22.1
-21.3
-18.1
-16.5
-15.6
-12.1
dB
17.0
11.8
11.0
-9.5
-7.5
-5.7
-4.3
-3.2
-2.5
-2.3
dB
assoc
9.6
8.5
7.7
6.9
O
= 50 Ω, V
Mag
0.014
0.048
0.078
0.086
0.125
0.149
0.165
0.248
0.334
0.424
0.517
0.613
0.695
0.751
0.765
S
CE
12
25
20
15
10
Figure 15. Gain vs. Frequency at
5 V, 10 mA.
Note: dB(|S
5
0
= 5 V, I
10
0
dB(S[2,1])
Ang
1
gmax
-12
-31
-51
-71
78
68
68
67
64
61
59
47
34
20
C
5
FREQUENCY (GHz)
k
= 10 mA
2
21
|) = 20 * log(|S
3
Mag
0.898
0.584
0.514
0.508
0.483
0.473
0.468
0.444
0.419
0.375
0.301
0.214
0.214
0.311
0.426
4
S
22
5
Ang
-120
-162
21
136
-13
-24
-25
-26
-30
-34
-37
-52
-70
-92
6
89
57
1.25
1
0.75
0.5
0.25
0
|)