k6f8016u6 Samsung Semiconductor, Inc., k6f8016u6 Datasheet - Page 4

• Manufacturer Part Number: k6f8016u6
• Description: 512k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F8016U6B Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. T
2. Overshoot: V
3. Undershoot: -2.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTIC
1. Typical values are measured at V
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
A
=-40 to 85 C, otherwise specified.
CC
Item
+2.0V in case of pulse width 20ns.
Item
Item
1)
(f=1MHz, T
CC
=3.0V, T
Symbol
A
=25 C)
I
I
V
I
V
I
CC1
CC2
SB1
I
LO
OH
LI
OL
A
=25 C and not 100% tested.
Symbol
V
CS
LB=UB=V
Cycle time=1 s, 100%duty, I
LB 0.2V or/and UB 0.2V, CS
V
Cycle time=Min, I
CS
I
I
Other input =0~Vcc
C
C
OL
OH
1) CS
2) 0V CS
IN
IN
IN
IO
=Vss to Vcc
1
2
= 2.1mA
= -1.0mA
=V
=V
V
Symbol
CC
1
IH
IH
Vcc
Vss
V
V
-0.2V
Vcc-0.2V, CS
, LB=V
or CS
IH
IL
IH
2
, V
0.2V(CS
IO
2
IL
=V
=Vss to Vcc
IO
or/and UB=V
Test Condition
IL
=0mA, 100% duty, CS
Test Conditions
or OE=V
2
V
2
V
controlled)
IO
IN
Vcc-0.2V(CS
-0.3
=0V
=0V
4
Min
1)
2.7
2.2
0
IO
3)
IH
2
=0mA, CS
IL
or WE=V
Vcc-0.2V, V
, V
IN
=V
1
controlled) or
IL
1
IL
or V
1
=V
0.2V,
or
Typ
IN
3.0
0
-
-
IL
IH
0.2V or
,
Min
-
-
70ns
55ns
Vcc+0.3
Min
2.4
-1
-1
-
-
-
-
-
Max
3.3
0.6
CMOS SRAM
0
Max
10
8
Typ
2)
0.5
-
-
-
-
-
-
-
1)
September 2001
Max
0.4
Revision 1.0
22
28
15
1
1
2
-
Unit
Unit
pF
pF
V
V
V
V
Unit
mA
mA
V
V
A
A
A