k6f8016u6 Samsung Semiconductor, Inc., k6f8016u6 Datasheet - Page 3

• Manufacturer Part Number: k6f8016u6
• Description: 512k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
K6F8016U6B Family
PRODUCT LIST
FUNCTIONAL DESCRIPTION
1. X means don t care. (Must be low or high state)
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.
CS
X
X
H
L
L
L
L
L
L
L
L
1)
1)
1
CS
X
X
H
H
H
H
H
H
H
H
L
1)
1)
2
K6F8016U6B-EF55
K6F8016U6B-EF70
OE
X
X
X
X
X
X
H
H
L
L
L
Item
1)
1)
1)
1)
1)
1)
Part Name
WE
X
X
X
H
H
H
H
H
L
L
L
1)
1)
1)
LB
X
X
X
H
H
H
L
L
L
L
L
1)
1)
1)
1)
Industrial Temperature Products(-40~85 C)
UB
X
X
X
H
H
H
L
L
L
L
L
1)
1)
1)
V
Symbol
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
IN
Dout
Dout
T
Din
Din
V
, V
P
STG
T
CC
1~8
D
A
3
OUT
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Din
Din
9~16
-0.5 to V
Lower Byte Read
Upper Byte Read
Lower Byte Write
Upper Byte Write
48-TBGA, 55ns, 3.0V
48-TBGA, 70ns, 3.0V
Output Disabled
Output Disabled
Deselected
Deselected
Deselected
Word Read
Word Write
CC
-0.3 to 3.6
-65 to 150
Mode
-40 to 85
Ratings
Function
+0.3V(Max. 3.6V)
1.0
CMOS SRAM
September 2001
Standby
Standby
Standby
Power
Active
Active
Active
Active
Active
Active
Active
Active
Revision 1.0
Unit
W
V
V
C
C