TIC216M ETC1 [List of Unclassifed Manufacturers], TIC216M Datasheet - Page 2

• Manufacturer Part Number: TIC216M
• Description: SILICON TRIACS
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

TIC216 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t
thermal characteristics
2
V
V
I
I
dv/dt
dv/dt
H
L
GT
T
R
R
θJC
θJA
(c)
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
PARAMETER
Gate trigger
voltage
On-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Junction to case thermal resistance
Junction to free air thermal resistance
the current carrying contacts are located within 3.2 mm from the device body.
R
G
= 100 Ω, t
p(g)
= 20 µs, t
V
V
V
V
I
V
V
V
V
V
V
T
supply
supply
supply
supply
supply
supply
supply
supply
DRM
DRM
= ±8.4 A
r
= ≤ 15 ns, f = 1 kHz.
= Rated V
= Rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= -12 V†
= +12 V†
= -12 V†
PARAMETER
DRM
DRM
R
R
R
R
I
I
I
(see Note 6)
I
I
TEST CONDITIONS
G
G
G
G
TRM
L
L
L
L
= 50 mA
= 0
= 0
= 0
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= ±8.4 A
p
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
R O D U C T
t
t
t
t
(see Note 5)
Init’ I
Init’ I
T
T
p(g)
p(g)
p(g)
p(g)
C
C
= 110°C
= 70°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TM
TM
Specifications are subject to change without notice.
DECEMBER 1971 - REVISED SEPTEMBER 2002
= 100 mA
= -100 mA
I N F O R M A T I O N
MIN
MIN
±2
TYP
TYP
±20
±5
-2
4
MAX
MAX
±1.7
62.5
-2.2
-2.2
-30
2.2
2.5
30
3
UNIT
UNIT
°C/W
°C/W
V/µs
V/µs
mA
mA
V
V