TISP61089SD POINN [Power Innovations Ltd], TISP61089SD Datasheet - Page 2

• Manufacturer Part Number: TISP61089SD
• Description: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
• Manufacturer: POINN [Power Innovations Ltd]

TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1999
absolute maximum ratings
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
recommended operating conditions
Repetitive peak off-state voltage, I
Repetitive peak gate-cathode voltage, V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current, 60 Hz (see Notes 1 and 2)
Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2)
Operating free-air temperature range
Junction temperature
Storage temperature range
P R O D U C T
2
C
R
G
S
the protector will crowbar into a low voltage on-state condition. As the overvoltage subsides the high holding
current of the crowbar prevents d.c. latchup.
The TISP61089S is intended to be used with a series combination of a 25
suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit
or become high impedance (see Applications Information). For equipment compliant to ITU-T
recommendations K20 or K21 only, the series resistor value is set by the power cross requirements. For K20
and K21, a minimum series resistor value of 10
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The TISP61089S buffered gate
design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.
The TISP61089S is the TISP61089D with a different pinout. The feed-through Ring (leads 4 — 5) and Tip
(leads 1 — 8) connections have been replaced by single Ring (lead 4) and Tip (lead 1) connections. This
increases package creepage distance of the biased to ground connections from about 0.7 mm to over
3 mm.
10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
5/320 µs (ITU-T recommendation K20 & K21, open-circuit voltage wave shape 10/700)
1.2/50 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4, Alternative)
2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
0.1 s
1 s
5 s
300 s
900 s
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
Gate decoupling capacitor
TISP61089S series resistor for first-level and second-level surge survival
TISP61089S series resistor for first-level surge survival
its initial conditions.
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
I N F O R M A T I O N
G
= 0, -40°C
KA
= 0, -40°C
RATING
T
J
85°C
T
J
85°C
is recommended.
T
J
85°C. The surge may be repeated after the device returns to
SYMBOL
V
V
I
GKRM
I
I
T
GSM
TSM
TSP
DRM
T
T
stg
A
J
or higher resistance and a
MIN
100
40
25
TYP
-40 to +150
-40 to +150
-40 to +85
220
VALUE
-100
0.95
0.93
120
100
-85
4.5
2.4
30
40
11
40
MAX
UNIT
UNIT
°C
nF
°C
°C
V
V
A
A
A