TISP4095H3BJ POINN [Power Innovations Ltd], TISP4095H3BJ Datasheet

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TISP4095H3BJ

Manufacturer Part Number
TISP4095H3BJ
Description
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Manufacturer
POINN [Power Innovations Ltd]
Datasheet

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Copyright © 1999, Power Innovations Limited, UK
description
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can
be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
WAVE SHAPE
8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Low Differential Capacitance . . . 67 pF max.
UL Recognized, E132482
DEVICE
10/1000 µs
10/160 µs
10/700 µs
10/560 µs
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400
2/10 µs
8/20 µs
TELECOMMUNICATION SYSTEM 100 A 10/1000 OVERVOLTAGE PROTECTORS
V
100
120
135
145
155
180
200
230
275
300
GR-1089-CORE
GR-1089-CORE
TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ,
DRM
58
65
75
IEC 61000-4-5
V
ITU-T K20/21
FCC Part 68
FCC Part 68
I N F O R M A T I O N
STANDARD
V
125
145
165
180
200
240
265
300
350
400
(BO)
70
80
95
V
I
500
300
250
200
160
100
TSP
A
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
device symbol
TISP4240H3BJ THRU TISP4400H3BJ
Terminals T and R correspond to the
alternative line designators of A and B
R(B)
NOVEMBER 1997 - REVISED MARCH 1999
1
SMBJ PACKAGE
(TOP VIEW)
R
T
SD4XAA
2
T(A)
MDXXBG
1

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TISP4095H3BJ Summary of contents

Page 1

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, Copyright © 1999, Power Innovations Limited, UK TELECOMMUNICATION SYSTEM 100 A 10/1000 OVERVOLTAGE PROTECTORS 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘4070 ...

Page 2

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 This TISP4xxxH3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels ( 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities ...

Page 3

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, electrical characteristics for the T and R terminals, T PARAMETER Repetitive peak off DRM D state current V Breakover voltage dv/dt = ±750 V/ms, R (BO) dv/dt Impulse breakover Maximum ramp value = ±500 V V (BO) voltage di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A ...

Page 4

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 thermal characteristics PARAMETER R Junction to free air thermal resistance JA NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. ...

Page 5

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 200 150 ° 100 µs 100 '4125 10 THRU 7 '4200 ...

Page 6

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9 0.8 0.7 0.6 0.5 '4070 THRU '4095 0.4 0.3 '4125 THRU '4200 '4240 THRU '4400 0.2 0 Off-state Voltage - V D Figure ...

Page 7

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 600 Vrms, 50/60 Hz GEN R = 1.4*V 20 GEN EIA/JESD51-2 ENVIRONMENT 15 EIA/JESD51-3 PCB ° 1.5 0· Current Duration - s Figure 8. V DERATING FACTOR DRM vs MINIMUM AMBIENT TEMPERATURE 1 ...

Page 8

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12 multiples to limit the voltage at several points in a circuit (Figure 13). ...

Page 9

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, a.c. power testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow ...

Page 10

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 typical circuits RING FUSE TISP4350 TIP Figure 14. MODEM INTER-WIRE PROTECTION OVER- RING/TEST CURRENT PROTECTION PROTECTION TIP WIRE R1a Th1 R1b RING WIRE Figure 17. LINE CARD RING/TEST PROTECTION ...

Page 11

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, SMBJ (DO-214AA) plastic surface mount diode package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly ...

Page 12

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 recommended printed wiring footprint. SMB Pad Size device symbolization code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. ...

Page 13

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, tape dimensions SMB Package Single-Sprocket Tape 4,10 3,90 8,10 7,90 Direction of Feed NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20° within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:- Reel diameter: Reel hub diameter 75 mm MIN ...

Page 14

... TISP4070H3BJ THRU TISP4095H3BJ, TISP4125H3BJ THRU TISP4200H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...

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