TYN808 STMICROELECTRONICS [STMicroelectronics], TYN808 Datasheet - Page 5

• Manufacturer Part Number: TYN808
• Description: Sensitive and standard 8 A SCRs
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

TN805, TN815, TS820, TYN608, TYN808, TYN1008
Figure 9.
Figure 11. Surge peak on-state current versus
Figure 13. On-state characteristics (maximum
50.0
10.0
100
10.00
1.0
90
80
70
60
50
40
30
20
10
0.1
1.00
0.10
0.01
0
0.0
1
I
I
TSM
TM
0
dV/dt[R
TN8 / TS8
(A)
(A)
V =0.85V
R =46m
200
T max.:
t0
d
0.5
j
T
j
=max
GK
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values) for TS820
number of cycles
values)
400
TYN08
Repetitive
T =110°C
] / dV/dt[
C
1.0
600
10
T =25°C
1.5
R
Non repetitive
T initial=25°C
Number of cycles
j
j
800
GK
R
=220 ]
V
GK
1000
TM
2.0
(k )
(V)
1200
2.5
100
1400
3.0
1600
V = 0.67 x V
t =10ms
p
D
One cycle
T
j
= 125°C
1800
Doc ID 7476 Rev 6
3.5
DRM
2000
1000
4.0
Figure 10. Relative variation of dV/dt immunity
Figure 12. Non-repetitive surge peak on-state
Figure 14. Thermal resistance junction to
100
1000
15.0
12.5
10.0
80
60
40
20
100
7.5
5.0
2.5
0.0
0
10
0.01
R
0
0
dV/dt[C
th(j-a)
I
TSM
20
2
(A), I t (A s)
dI/dt limitation
(°C/W)
GK
Sinusoidal pulse width tp < 10 ms
40
versus gate-cathode capacitance
(typical values) for TS820
current and corresponding values
of I
ambient versus copper surface
under tab (DPAK)
2
4
] / dV/dt[
2
2
60
t
6
0.10
R
80
GK
8
=220 ]
S(cm²)
C
100
t (ms)
p
GK
Epoxy printed circuit board FR4
copper thickness = 35 µm
10
(nF)
120
12
140
TN8 / TS8
1.00
I t
2
Characteristics
14
I
160
TSM
180
16
V = 0.67 x V
TN8 / TS8
TYN08
D
T initial = 25°C
TYN08
R
j
T
GK
j
= 125°C
= 220
200
18
DRM
10.00
5/12
220
20