PMEG6010ETR NXP [NXP Semiconductors], PMEG6010ETR Datasheet

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PMEG6010ETR

Manufacturer Part Number
PMEG6010ETR
Description
High-temperature 60 V, 1 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG6010ETR
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
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1. Product profile
Table 1.
Symbol
I
I
V
V
I
F
F(AV)
R
R
F
Quick reference data
Parameter
forward current
average forward
current
reverse voltage
forward voltage
reverse current
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
PMEG6010ETR
High-temperature 60 V, 1 A Schottky barrier rectifier
10 October 2012
Average forward current: I
Reverse voltage: V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature T
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Conditions
T
δ = 0.5 ; f = 20 kHz; T
square wave
δ = 0.5 ; f = 20 kHz; T
square wave
T
I
T
δ ≤ 0.02 ; pulsed
F
sp
j
j
= 1 A; T
= 25 °C
= 25 °C; V
= 165 °C
R
j
≤ 175 °C
j
≤ 60 V
= 25 °C
R
= 60 V; t
F(AV)
≤ 1 A
amb
sp
p
≤ 170 °C;
≤ 300 µs;
≤ 140 °C;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
460
30
Max
1.4
1
1
60
530
60
Unit
A
A
A
V
mV
µA

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PMEG6010ETR Summary of contents

Page 1

... PMEG6010ETR High-temperature Schottky barrier rectifier 10 October 2012 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. ...

Page 2

... T amb square wave δ kHz; T ≤ 170 °C; sp square wave ms °C; square wave p j(init) All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR Min Typ Max - 4 standard footprint Graphic symbol 1 2 sym001 ...

Page 3

... High-temperature Schottky barrier rectifier Conditions T ≤ 25 °C amb Conditions in free air are a significant part of the total power losses standard footprint All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR Min Max - 680 [2] - 1150 [3] - 2140 [1] - 175 -55 175 -65 175 O , standard footprint ...

Page 4

... -40 ° 125 ° 150 ° All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR 006aab363 (s) p 006aab364 (s) p Min Typ Max - 320 370 ...

Page 5

... F j 006aad117 - ( -10 10 0.5 0.6 0.7 V (V) F Fig. 5. All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR Min Typ - 365 - 1 120 - 4.4 - 500 (1) (2) (3) (4) ( 175 °C ...

Page 6

... R Fig. 7. 006aad120 1.00 P R(AV) (W) 0.75 (1) (2) 0.50 (3) 0.25 ( (V) R Fig. 9. All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR (3) (2) ( 0.5 1.0 I F(AV 175 °C j (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ Average forward power dissipation as a function of average forward current; typical values ...

Page 7

... I F(AV) (A) 1.0 0.5 150 200 T (°C) amb 2 Fig. 13. Average forward current as a function of All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR (1) (2) (3) ( 100 150 FR4 PCB, standard footprint T = 175 °C j (1) δ (DC) (2) δ kHz (3) δ kHz (4) δ ...

Page 8

... Product data sheet High-temperature Schottky barrier rectifier 1.5 (1) I F(AV) (A) 1.0 (2) (3) 0.5 ( 100 t rr All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR 006aad124 150 200 T (° R(meas) time 006aad022 © NXP B.V. 2012. All rights reserved ...

Page 9

... High-temperature Schottky barrier rectifier duty cycle δ × δ with I defined as peak current All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR time V FRM V F time 001aab912 006aac658 = I at DC, and I RMS ...

Page 10

... NXP Semiconductors 9. Package outline Fig. 18. Package outline SOD123W 10. Soldering 2.1 1.6 Fig. 19. Reflow soldering footprint for SOD123W 11. Revision history Table 8. Revision history Data sheet ID Release date PMEG6010ETR v.1 20121010 PMEG6010ETR Product data sheet High-temperature Schottky barrier rectifier 1.9 1.5 1 3.7 2.8 3.3 2.4 2 1.05 0.75 Dimensions in mm 4.4 2.9 2.8 (2×) 1.1 (2×) 1.2 (2× ...

Page 11

... NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG6010ETR Product data sheet High-temperature Schottky barrier rectifier All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR © NXP B.V. 2012. All rights reserved ...

Page 13

... For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 October 2012 PMEG6010ETR Product data sheet High-temperature Schottky barrier rectifier All information provided in this document is subject to legal disclaimers. 10 October 2012 PMEG6010ETR © NXP B.V. 2012. All rights reserved ...

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