PMEG4010ETR NXP [NXP Semiconductors], PMEG4010ETR Datasheet - Page 6

no-image

PMEG4010ETR

Manufacturer Part Number
PMEG4010ETR
Description
High-temperature 40 V, 1 A Schottky barrier rectifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG4010ETR
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PMEG4010ETR
Product data sheet
Fig. 6.
Fig. 8.
P
(pF)
R(AV)
(W)
C
250
200
150
100
d
1.2
0.8
0.4
50
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
0
0
j
= 150 °C
10
10
amb
= 25 °C
20
20
30
30
(4)
All information provided in this document is subject to legal disclaimers.
006aab367
V
V
006aad112
R
R
(3)
(V)
(V)
(1)
(2)
40
40
26 September 2012
High-temperature 40 V, 1 A Schottky barrier rectifier
Fig. 7.
Fig. 9.
P
P
F(AV)
(W)
R(AV)
(W)
0.5
0.4
0.3
0.2
0.1
0.3
0.2
0.1
0
0
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Average forward power dissipation as a
function of average forward current; typical
values
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
0
0
j
j
= 175 °C
= 125 °C
10
(1)
0.5
(2)
20
PMEG4010ETR
1.0
(3)
30
I
F(AV)
© NXP B.V. 2012. All rights reserved
(4)
006aad149
V
006aad111
R
(3)
(A)
(V)
(4)
(1)
(2)
1.5
40
6 / 13

Related parts for PMEG4010ETR