hy5du281622ftp Hynix Semiconductor, hy5du281622ftp Datasheet - Page 18

• Manufacturer Part Number: hy5du281622ftp
• Description: 128mb Ddr Sdram
• Manufacturer: Hynix Semiconductor

Rev. 1.0 /June 2008
DC CHARACTERISTICS II
8Mx16
Operating
Current
Operating
Current
Precharge
Power Down
Standby
Current
Idle Standby
Current
Idle Standby
Current
Idle Quiet
Standby
Current
Active Power
Down
Standby
Current
Active
Standby
Current
Parameter Symbol
(2M x4Bank x16I/O)
I
I
I
I
I
I
I
I
DD2N
DD2Q
DD3N
DD2P
DD2F
DD3P
DD0
DD1
One bank; Active - Precharge ; t
t
per clock cycle; address and control inputs changing
once per clock cycle
One bank; Active - Read - Precharge;
Burst Length=2; t
and control inputs changing once per clock cycle
All banks idle; Power down mode; CKE=Low,
t
V
DM
/CS=High, All banks idle; t
CKE=High; address and control inputs changing once
per clock cycle.
V
/CS>=V
Addresses and other control inputs stable, V
DQ, DQS and DM
One bank active; Power down mode; CKE=Low,
t
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
t
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing once
per clock cycle
CK
CK
CK
RC
IN
IN
=t
=t
=t
=t
>=V
=V
CK
CK
CK
RAS
REF
(min) ; DQ,DM and DQS inputs changing twice
(min)
(min)
IH
IH
(max); t
(min) or V
(min); All banks idle; CKE>=V
for DQ, DQS and DM
(TA=0 to 70
CK
RC
Test Condition
=t
=t
IN
CK
RC
=<V
(min);
(min); t
o
C, Voltage referenced to V
CK
IL
(max) for DQ, DQS and
=t
CK
RC
CK
(min);
=t
=t
RC
CK
(min);
(min); address
IH
(min);
IN
=Vref for
SS
HY5DU281622FT(P) Series
= 0V)
250
130
140
20
70
70
70
20
70
4
Speed
5/ D43/ D4
200
120
120
10
60
60
60
20
70
Unit
MHz
mA
mA
mA
mA
mA
mA
mA
mA
Note
18