la1136nm Sanyo Semiconductor Corporation, la1136nm Datasheet - Page 16

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la1136nm

Manufacturer Part Number
la1136nm
Description
Am Tuners For Car Radios And Home Stereos
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
6.
The wideband AGC circuit two-signal sensitivity and shortwave interference suppression characteristics have been achieved by
reducing the sensitivity by approximately 10 dB from that of previous devices. If a FET with low gm and high I
sensitivity can be increased by increasing the external sensitivity adjustment resistor (30 ). However, the voltage drop across this
resistor can cause the cascade AGC transistor to saturate. Therefore, if the sensitivity is to be increased by a large amount, a choke
coil should be added as shown in the figure below.
7.
27 k
8.
Image interference in the alignment circuit can be reduced by up to 70 dB at fr = 1.4 MHz by injecting a 2.3 MHz trap signal into
the primary coil. Note that this technique reduces the sensitivities at frequencies above 1.4 MHz.
9.
Wideband AGC Sensitivity
The local oscillation level increased during LW (approx. 50°C or greater)
Image Interference Reduction
Upgraded Features of LA1136 and LA1137 to LA1136N and LA1137N
IF count buffer output voltage
74 dBµ, zero modulation,
fr = 1 MHz when STOP RQ = 0 V
Signal detector output voltage
when V
should be added between pins 19 and 23 for LA1136N, and between pins 15 and 19 for LA1137N. Not necessary for MW.
CC
OFF
Test circuit LA1137N
Test circuit LA1137N
Upgraded features
LA1136N, 1136NM, 1137N, 1137NM
Unit (resistance:
, capacitance: F)
LA1136, LA1137 LA1136N, LA1137N
Unit (resistance:
80 mVp-p
0.7 V
, capacitance: F)
1.5 mVp-p
5 V
DSS
No. 3507-16/28
is used, the

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