hm5118165tt-7 Elpida Memory, Inc., hm5118165tt-7 Datasheet - Page 7

• Manufacturer Part Number: hm5118165tt-7
• Description: 16 M Edo Dram 1-mword ? 16-bit
• Manufacturer: Elpida Memory, Inc.

DC Characteristics (Ta = 0 to +70°C, V
Parameter
RAS-only refresh current*
Standby current*
CAS-before-RAS refresh
current
EDO page mode current*
Battery backup current*
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Notes: 1. I
Capacitance (Ta = 25°C, V
Parameter
Input capacitance (Address)
Input capacitance (Clocks)
Output capacitance (Data-in, Data-out)
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while UCAS and LCAS = V
4. V
2. RAS, UCAS and LCAS = V
open condition.
CC
IH
depends on output load condition when the device is selected. I
1
V
CC
– 0.2 V, 0 V
4
1,
2
*
3
Symbol
I
I
I
I
I
I
I
I
V
V
CC3
CC5
CC6
CC7
CC10
CC11
LI
LO
OH
OL
CC
V
IL
= 5 V ± 10%)
Data Sheet E0154H10
IH
0.2 V.
to disable Dout.
HM5118165
-5
Min Max Min Max Min Max Unit
—
—
—
—
—
—
–10 10
–10 10
2.4
0
Symbol
C
C
C
200 —
5
190 —
185 —
500 —
300 —
V
0.4
I1
I2
I/O
CC
CC
-6
—
–10 10
–10 10
2.4
0
= 5 V ± 10%, V
170 —
5
170 —
165 —
500 —
300 —
V
0.4
CC
Typ
—
—
—
-7
—
–10 10
–10 10
2.4
0
IL
.
150 mA
5
150 mA
145 mA
500 µA
300 µA
V
0.4
CC
SS
Max
5
7
7
= 0 V) (cont.)
mA
µA
µA
V
V
IH
.
CC
max is specified at the output
HM5118165 Series
Test conditions
t
RAS = V
UCAS, LCAS = V
Dout = enable
t
t
CMOS interface
Dout = High-Z
CBR refresh: t
µs
t
CMOS interface
RAS, UCAS, LCAS
V
Dout = High-Z
0 V
0 V
Dout = disable
High Iout = –2 mA
Low Iout = 2 mA
RC
RC
HPC
RAS
Unit
pF
pF
pF
= min
= min
= min
0.3 µs
Vin
Vout
IH
,
7 V
7 V
Notes
1
1
1, 2
RC
= 125
IL
0.2
7