hm51w16165tt-7 Elpida Memory, Inc., hm51w16165tt-7 Datasheet - Page 11

• Manufacturer Part Number: hm51w16165tt-7
• Description: 16 M Edo Dram 1-mword ? 16-bit
• Manufacturer: Elpida Memory, Inc.

AC Characteristics (Ta = 0 to +70°C, V
Test Conditions
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
Parameter
Random read or write cycle time
RAS precharge time
CAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS delay time from Din
Transition time (rise and fall)
Input rise and fall time: 2 ns
Input levels: 0 V, 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
Data Sheet E0153H10
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
CP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
OED
DZO
DZC
T
HM51W16165 Series, HM51W18165 Series
HM51W16165/HM51W18165
-5
Min
84
30
8
50
8
0
8
0
8
12
10
10
35
5
13
0
0
2
CC
= 3.3 V ± 0.3 V, V
Max
—
—
—
10000 60
10000 10
—
—
—
—
37
25
—
—
—
—
—
—
50
-6
Min
104
40
10
0
10
0
10
14
12
13
40
5
15
0
0
2
Max
—
—
—
10000 70
10000 13
—
—
—
—
45
30
—
—
—
—
—
—
50
SS
-7
124
50
13
0
10
0
13
14
12
13
45
5
18
0
0
2
Min
= 0 V)*
Max
—
—
—
10000 ns
10000 ns
—
—
—
—
52
35
—
—
—
—
—
—
50
1,
*
2,
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*
18,
*
19,
Notes
21
21
3
4
23
22
5
6
6
7
*
20
11