buk438w-800a NXP Semiconductors, buk438w-800a Datasheet - Page 5

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buk438w-800a

Manufacturer Part Number
buk438w-800a
Description
Buk438w-800a/b Powermos Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
February 1998
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
12
10
8
6
4
2
0
= f(Q
0
VGS / V
G
); conditions: I
20
40
VDS / V = 160
QG / nC
D
= 7.6 A; parameter V
60
80
640
100
DS
5
I
F
= f(V
20
15
10
Fig.14. Typical reverse diode current.
5
0
0
SDS
IF / A
); conditions: V
0.2
0.4
Tj / C = 150
VSDS / V
0.6
BUK438W-800A/B
GS
= 0 V; parameter T
0.8
Product specification
BUK4y8-800
25
1
1.2
Rev 1.000
j

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