buk436w-800a NXP Semiconductors, buk436w-800a Datasheet
buk436w-800a
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buk436w-800a Summary of contents
Page 1
... PIN CONFIGURATION CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product specification BUK436W-800A/B MAX. MAX. UNIT -800A -800B 800 800 V 4 3.5 A 125 125 SYMBOL MAX. UNIT 800 V 800 -800A -800B 4.0 3.5 A 2.5 2.2 A ...
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... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - 4.0 A; -dI /dt = 100 100 Product specification BUK436W-800A/B MIN. TYP. MAX. UNIT 800 - - V 2.1 3.0 4 0.1 1 100 ...
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... Fig.5. Typical output characteristics RDS(ON) / Ohm BUK456-800A 100 100 ˚C Fig.6. Typical on-state resistance Product specification BUK436W-800A/B BUKx56-hv 0.5 0.2 0 1E-05 1E-03 1E-01 1E+ f(t); parameter j-mb ...
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... Fig.11. Sub-threshold drain current f 10000 1000 100 10 100 120 140 0 Fig.12. Typical capacitances f Product specification BUK436W-800A/B max. typ. min. - 100 120 140 conditions mA SUB-THRESHOLD CONDUCTION ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter February 1998 BUK4y6-800 150 640 Fig.14. Typical reverse diode current f(V ); conditions SDS 5 Product specification BUK436W-800A/B BUK4y6-800A VSDS / parameter Rev 1.000 ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1998 5.3 max 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.15. SOT429 (TO247); pin 2 connected to mounting base. 6 Product specification BUK436W-800A/B o 3.5 max 0.9 max Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 BUK436W-800A/B 7 Product specification Rev 1.000 ...