BAP1321-03_01 NXP [NXP Semiconductors], BAP1321-03_01 Datasheet - Page 3

• Manufacturer Part Number: BAP1321-03_01
• Description: Silicon PIN diode
• Manufacturer: NXP [NXP Semiconductors]

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 May 11
V
I
C
r
L
R
SYMBOL
SYMBOL
s
s
s
s
s
j
R
D
L
S
F
= 25 C unless otherwise specified.
d
21
21
21
21
21
th j-s
Silicon PIN diode
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
R
I
V
V
V
V
f = 100 MHz; note 1
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 50 mA
I
I
I
I
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
F
F
F
F
= 100 ; measured at I
= 60 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
3
CONDITIONS
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;
0.95
0.4
0.35
0.25
3.4
2.4
1.2
0.85
16.6
11.6
9.2
0.26
0.35
0.44
0.20
0.29
0.38
0.13
0.22
0.32
0.10
0.20
0.29
0.5
1.5
TYP.
VALUE
BAP1321-03
Product specification
120
1.1
100
0.45
0.32
5.0
3.6
1.8
1.3
MAX.
UNIT
K/W
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
UNIT
s