74LVC10ABQ,115 NXP Semiconductors, 74LVC10ABQ,115 Datasheet - Page 6

IC TRIPLE 3IN NAND GATE 14DHVQFN

74LVC10ABQ,115

Manufacturer Part Number
74LVC10ABQ,115
Description
IC TRIPLE 3IN NAND GATE 14DHVQFN
Manufacturer
NXP Semiconductors
Series
74LVCr
Datasheet

Specifications of 74LVC10ABQ,115

Logic Type
NAND Gate
Number Of Inputs
3
Number Of Circuits
3
Current - Output High, Low
24mA, 24mA
Voltage - Supply
1.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-VQFN Exposed Pad, 14-HVQFN, 14-SQFN, 14-DHVQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2994-2
935273592115
Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70 C the value of P
2003 Jun 20
V
V
T
t
V
I
V
I
V
I
I
T
P
r
IK
OK
O
CC
SYMBOL
SYMBOL
, t
amb
stg
CC
I
CC
I
O
tot
Triple 3-input NAND gate
f
, I
For (T)SSOP14 packages: above 60 C the value of P
For DHVQFN14 packages: above 60 C the value of P
GND
supply voltage
input voltage range
operating ambient temperature
input rise and fall times
supply voltage
input diode current
input voltage
output diode current
output voltage
output source or sink current
V
storage temperature range
power dissipation
CC
or GND current
PARAMETER
PARAMETER
for maximum speed performance
for low-voltage applications
in free air
V
V
V
note 1
V
note 1
V
T
amb
CC
CC
I
O
O
< 0
D
> V
= 0 to V
= 1.2 to 2.7 V
= 2.7 to 3.6 V
derates linearly with 8 mW/K.
= 40 to +85 C; note 2
CC
D
D
6
CONDITIONS
CONDITIONS
or V
derates linearly with 5.5 mW/K.
derates linearly with 4.5 mW/K.
CC
O
< 0
2.7
1.2
0
0
0
40
0.5
0.5
0.5
65
MIN.
MIN.
3.6
3.6
5.5
+85
20
10
+6.5
+6.5
V
+150
500
Product specification
50
50
50
100
CC
MAX.
MAX.
74LVC10A
+ 0.5 V
V
V
ns/V
ns/V
V
mA
V
mA
mA
mA
mW
V
C
C
UNIT
UNIT

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