SST29EE512-70-4C-EH SST [Silicon Storage Technology, Inc], SST29EE512-70-4C-EH Datasheet - Page 8

• Manufacturer Part Number: SST29EE512-70-4C-EH
• Description: 512 Kbit (64K x8) Page-Write EEPROM
• Manufacturer: SST [Silicon Storage Technology, Inc]

Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Voltage on A
Package Power Dissipation Capability (T
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Solder Reflow Temperature
Output Short Circuit Current
O
AC C
TABLE 5: DC O
©2005 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . . . . . 1 TTL Gate and C
See Figures 13 and 14
Symbol
I
I
I
I
I
V
V
V
V
DD
SB1
SB2
LI
LO
PERATING
IL
IH
OL
OH
1. Excluding certain with-Pb 32-PLCC units, all packages are 260
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
Certain with-Pb 32-PLCC package types are capable of 240
ONDITIONS OF
Parameter
Power Supply Current
Read
Program and Erase
Standby V
(TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
R
9
ANGE FOR
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
PERATING
T
DD
DD
EST
Ambient Temp
-40°C to +85°C
0°C to +70°C
Current
Current
SST29EE512
2
C
HARACTERISTICS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
1
4.5-5.5V
4.5-5.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
V
DD
Min
V
2.0
2.4
DD
= 4.5-5.5V
Limits
L
°
C for 10 seconds; please consult the factory for the latest information.
= 100 pF
Max
0.4
°
0.8
50
10
30
50
3
1
8
C capable in both non-Pb and with-Pb solder versions.
Units
mA
mA
mA
FOR
µA
µA
µA
V
V
V
V
SST29EE512
Test Conditions
Address input=V
V
CE#=WE#=V
CE#=OE#=WE#=V
V
V
V
V
I
I
CE#=OE#=V
CE#=OE#=WE#=V
OL
OH
DD
IN
OUT
DD
DD
=2.1 mA, V
=-400 µA, V
=GND to V
512 Kbit Page-Write EEPROM
=V
=V
=V
=GND to V
DD
DD
DD
Max
Min
Max
IL
IL
DD
DD
, WE#=V
, OE#=V
DD
DD
, V
=V
ILT
=V
, V
/V
IH
DD
DD
DD
DD
, V
IHT
DD
=V
-0.3V, V
Min
, at f=1/T
IH
IH
=V
Min
DD
DD
, all I/Os open
, V
=V
DD
Max
DD
DD
Max
SST29EE512
DD
=V
S71060-09-000
Max
RC
=V
DD
DD
Min,
Max
Max
DD
DD
T5.2 1060
+0.5V
+2.0V
9/05