upa869td Renesas Electronics Corporation., upa869td Datasheet - Page 3

• Manufacturer Part Number: upa869td
• Description: Npn Silicon + Sige Rf Transistor With 2 Different Elements
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
(1) Q1
(2) Q2
h
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
h
h
FE
Notes 1. Pulse measurement: PW ≤ 350
FE
FE
Value of Q1
Value of Q2
Marking
CLASSIFICATION
Rank
2. Collector to base capacitance when the emitter grounded
Parameter
Parameter
140 to 220
100 to 145
FB
xJ
Symbol
Symbol
h
S
h
S
S
C
C
FE
FE
I
I
I
I
re
re
NF
NF
G
CBO
EBO
CBO
EBO
f
21e
f
f
21e
21e
T
Note 2
T
T
Note 2
Note 1
Note 1
a



Preliminary Data Sheet PU10460EJ01V0DS
2
2
2
µ
A
V
V
V
V
V
Z
V
Z
V
V
V
V
V
V
V
V
Z
V
s, Duty Cycle ≤ 2%
V
V
= +25°C)
S
S
S
CB
EB
CE
CE
CE
CE
CE
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
= Z
= Z
= Z
= 0.5 V, I
= 0.5 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
opt
opt
opt
E
C
C
C
C
C
E
E
C
C
C
C
C
C
Test Conditions
Test Conditions
= 0 mA
= 0 mA, f = 1 MHz
= 0 mA
= 2 mA
= 15 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
= 5 mA
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
C
C
E
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
MIN.
MIN.
140
100
9.5
4.5
15
11
−
−
−
−
−
−
3
5
3
−
−
TYP.
TYP.
11.5
180
120
0.8
0.2
4.5
6.5
5.5
1.9
0.6
18
13
−
−
−
−
4
MAX.
MAX.
100
100
220
600
600
145
1.5
0.4
2.5
0.8
−
−
−
−
−
−
−
µ
PA869TD
GHz
GHz
GHz
Unit
Unit
nA
nA
dB
dB
dB
pF
nA
nA
dB
dB
dB
pF
−
−
3