upa869td Renesas Electronics Corporation., upa869td Datasheet

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upa869td

Manufacturer Part Number
upa869td
Description
Npn Silicon + Sige Rf Transistor With 2 Different Elements
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10460EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
FEATURES
• 2 different built-in transistors (NESG2046M33, 2SC5800)
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
3-pin super lead-less minimold part No.
3-pin thin-type ultra super minimold part No.
µ
µ
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
PA869TD
PA869TD-T3
Remark To order evaluation samples, contact your nearby sales office.
Q1: High gain SiGe transistor
Q2: Low phase distortion transistor suited for OSC applications
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
f
f
T
T
= 18 GHz TYP., S
= 6.5 GHz TYP., S
The unit sample quantity is 50 pcs.
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
50 pcs (Non reel)
10 kpcs/reel
21e
21e
Quantity
PRELIMINARY DATA SHEET
2
2
= 13 dB TYP. @ V
= 5.5 dB TYP. @ V
NPN SILICON + SiGe RF TWIN TRANSISTOR
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
CE
CE
= 1 V, I
= 1 V, I
NESG2046M33
C
Q1
C
= 15 mA, f = 2 GHz
= 15 mA, f = 2 GHz
Supplying Form
2SC5800
µ
Q2
NEC Compound Semiconductor Devices 2004
PA869TD

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upa869td Summary of contents

Page 1

PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor = 18 GHz TYP., S  ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current Total Power Dissipation P tot Junction Temperature Storage Temperature T × 1.0 mm (t) glass epoxy PCB ...

Page 3

ELECTRICAL CHARACTERISTICS (T (1) Q1 Parameter Symbol Collector Cut-off Current I CBO Emitter Cut-off Current I EBO DC Current Gain h FE Gain Bandwidth Product S Insertion Power Gain Noise Figure NF Associated Gain G Reverse Transfer Capacitance C re ...

Page 4

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm) 1.0±0.05 4 +0.07 0.8 –0. PIN CONNECTIONS Preliminary Data Sheet PU10460EJ01V0DS µ PA869TD (Top View ...

Page 5

The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

Page 6

For further information, please contact NEC Compound Semiconductor Devices, Ltd. E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong ...

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