TS8 STMICROELECTRONICS [STMicroelectronics], TS8 Datasheet - Page 3

• Manufacturer Part Number: TS8
• Description: 8A SCRS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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Table 6: Thermal resistance
Figure 1: Maximum average power dissipation
versus average on-state current
8
7
6
5
4
3
2
1
0
S = Copper surface under tab.
Symbol
0
P(W)
Symbol
dV/dt
I
I
V
STANDARD
V
V
R
R
DRM
RRM
I
V
R
GT
I
I
GD
TM
GT
H
= 180°
L
th(j-c)
th(j-a)
t0
d
1
V
V
I
I
V
I
Threshold voltage
Dynamic resistance
V
T
G
TM
D
D
D
DRM
= 100 mA
Junction to case (D.C.)
Junction to ambient (D.C.)
= 1.2 I
= 67 % V
= 12 V
= V
= 16 A
= V
2
DRM
GT
RRM
I
T(AV)
DRM
R
t
3
p
(A)
Gate open
R
L
= 380 µs
L
= 3.3 k
Test Conditions
= 33
Gate open T
4
5
360°
T
T
T
T
T
T
Parameter
j
j
j
j
j
j
j
= 125°C
=125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
6
S = 0.5 cm
Figure 2: Average and D.C. on-state current
versus case temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
0
I
T(AV)
²
(A)
DPAK
IPAK
TO-220AB
TN805
25
0.5
25
30
50
5
TN8, TS8 and TYNx08 Series
TN815 TYNx08
50
150
0.85
= 180°
15
40
50
T
1.3
0.2
1.6
D.C.
46
2
5
2
case
(°C)
75
150
15
30
70
2
Value
100
20
70
60
100
V/µs
Unit
m
mA
mA
mA
mA
°C/W
°C/W
µA
Unit
V
V
V
V
3/10
125