TS1220-600H-TR STMICROELECTRONICS [STMicroelectronics], TS1220-600H-TR Datasheet - Page 5

• Manufacturer Part Number: TS1220-600H-TR
• Description: SENSITIVE & STANDARD(12A SCRs)
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Figure 9: Relative variation of dV/dt immunity
versus
values) for TS8 series
Figure 11: Surge peak on-state current versus
number of cycles
Figure 13: On-state characteristics (maximum
values)
200
100
10.0
150
140
130
120
110
100
10
1.0
0.1
90
80
70
60
50
40
30
20
10
0
1
0.0
1
I
0
I
dV/dt[R
TM
TSM
(A)
V =0.85V
R =30m
Repetitive
T =105°C
T max.:
t0
d
(A)
0.5
C
j
TS12
T
j
=max
gate-cathode
GK
200
1.0
] / dV/dt[
TN12 / TYN12
1.5
400
10
T =25°C
R
j
Non repetitive
T initial=25°C
Number of cycles
GK
j
2.0
=220 ]
R
V
GK
TM
600
2.5
(k )
(V)
resistance
3.0
100
800
3.5
4.0
1000
t =10ms
V = 0.67 x V
p
D
One cycle
T
j
= 125°C
(typical
4.5
DRM
1000
1200
5.0
Figure 10: Relative variation of dV/dt immunity
versus
values) for TS8 series
Figure 12: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 14: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed circuit board FR4, copper
thickness: 35µm) (DPAK and D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
2000
1000
80
60
40
20
100
0
10
0
dV/dt[C
0.01
R
0
V = 0.67 x V
th(j-a)
I
D
TSM
R
T
GK
j
= 125°C
= 220
2
(A), I t (A s)
(°C/W)
gate-cathode
GK
25
DRM
dI/dt limitation
] / dV/dt[
TN12, TS12 and TYNx12 Series
2
4
D PAK
2
2
6
50
0.10
R
GK
DPAK
8
=220 ]
C
t (ms)
S(cm²)
p
GK
75
I
TSM
10
capacitance
(nF)
TS12
12
I t
2
100
1.00
2
TN12 / TYN12
PAK)
14
TN12 / TYN12
16
125
TS12
T initial = 25°C
j
(typical
18
10.00
5/11
150
20