STB80NF55-06_06 STMICROELECTRONICS [STMicroelectronics], STB80NF55-06_06 Datasheet - Page 5

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STB80NF55-06_06

Manufacturer Part Number
STB80NF55-06_06
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
SD
SD
DD
=80A, V
=80A,
Test conditions
=35V, T
GS
J
= 150°C
=0
Electrical characteristics
Min
Typ.
0.32
100
6.5
Max
320
1.5
80
Unit
µC
ns
A
A
V
A
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