qm75ha-h Mitsumi Electronics, Corp., qm75ha-h Datasheet - Page 4

• Manufacturer Part Number: qm75ha-h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
10
FORWARD BIAS SAFE OPERATING AREA
2
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10
0
1
0
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
BASE REVERSE CURRENT –I
0
T
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2
3
3
3
4
4
4
CURRENT (TYPICAL)
3 4 5
5
5
5
7
7
7
t
t
s
10
10
f
10
1
1
–2
TIME (s)
7
2
2
10
3
3
4
4
0
t
w
5
5
=50µs
7
7
10
2 3 4 5 7
10
V
I
I
–1
2
B1
C
T
T
CC
=75A
2
2
j
j
=1.5A
=25°C
=125°C
=300V
3
3
B2
100µs
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
COLLECTOR-EMITTER REVERSE
100
CHARACTERISTICS) (TYPICAL)
j
20
=125°C
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
0.4
COLLECTOR
DISSIPATION
200
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
CEO
400
80
(V)
1.2
500
100 120
SECOND
BREAKDOWN
AREA
600
QM75HA-H
I
–5A
T
T
B2
C
j
j
1.6
=25°C
=125°C
INSULATED TYPE
=–2A
( C)
700
140
CE
800
160
(V)
2.0
Feb.1999