qm50e2y Mitsumi Electronics, Corp., qm50e2y Datasheet - Page 3

• Manufacturer Part Number: qm50e2y
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
V
t
Q
R
R
RRM
rr
FM
th (j-c)
th (c-f)
rr
Symbol
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
10
100
10
10
80
60
40
20
–1
0
7
5
4
3
2
7
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
1.2
0
T
Parameter
V
T
BASE-EMITTER VOLTAGE V
j
=25°C
j
CE
=25°C
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
=2.0V
COMMON EMITTER INPUT
1.6
1
2.0
2
2.4
(Diode part (D2), T
V
I
I
Junction to case
Conductive grease applied (case to fin)
3
F
F
I
R
B
=50A
=50A, di/dt=–100A/ s, V
=V
=1A
RRM
I
B
I
I
I
2.8
=0.65A
B
B
B
, T
4
=0.3A
=0.2A
=0.1A
BE
j
=150 C
(V)
CE
3.2
(V)
5
j
=25 C)
Test conditions
R
=300V, T
j
=150 C
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
1
0
3
2
1
10
10
0
0
I
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
B
=0.65A
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
V
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
BE(sat)
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
j
j
=25°C
=125°C
j
j
V
=25°C
=125°C
CE(sat)
Min.
QM50E2Y/E3Y-H
—
—
—
—
—
—
V
10
10
CE
1
1
=2.0V
Limits
Typ.
2 3 4 5 7
2 3 4 5 7
—
—
—
—
—
—
V
CE
C
C
INSULATED TYPE
=5.0V
Max.
(A)
(A)
0.65
0.15
5.0
1.5
0.9
20
10
10
2
2
Feb.1999
Unit
C/ W
C/ W
mA
V
C
s