qm150hy-h Mitsumi Electronics, Corp., qm150hy-h Datasheet - Page 4

• Manufacturer Part Number: qm150hy-h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

0.16
0.12
0.08
0.04
10
10
10
10
10
10
0.2
FORWARD BIAS SAFE OPERATING AREA
10
2
7
7
5
4
3
2
7
7
5
4
3
2
7
5
3
2
5
3
2
7
5
3
2
0
10
1
0
7
COLLECTOR-EMITTER VOLTAGE V
10
3
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
–3
0
BASE REVERSE CURRENT –I
0
V
I
I
T
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
B1
C
C
CC
2
=150A
2
2 3 45 7
=25°C
=3A
SWITCHING TIME VS. BASE
=300V
3
2 3 4 5 7
3
T
T
4
4
j
j
=25°C
=125°C
CURRENT (TYPICAL)
5
5
7
7
10
10
10
t
1
s
–2
t
1
f
TIME (s)
2 3
2
2
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
100µ
–1
2
t
w
2
2
=50µ
S
3
3
B2
4
4
(A)
5
5
CE
S
7
7
10
(V)
10
10
1
0
3
400
300
200
100
100
10
10
10
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
REVERSE BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
200
40
HIGH POWER SWITCHING USE
60
0.8
–V
CEO
400
80 100 120 140
(V)
1.2
SECOND
BREAKDOWN
AREA
QM150HY-H
T
T
600
j
j
T
I
I
=25°C
=125°C
B2
B2
C
j
1.6
=125°C
INSULATED TYPE
=–2A
=–5A
( C)
CE
800
160
2.0
(V)
Feb.1999