BR211-240 PHILIPS [NXP Semiconductors], BR211-240 Datasheet - Page 3

• Manufacturer Part Number: BR211-240
• Description: Breakover diodes
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
August 1996
Breakover diodes
j
SYMBOL PARAMETER
dV
C
Fig.2. Test waveform for high voltage impulse (I
Fig.1. Definition of breakover diode characteristics .
= 25 ˚C unless otherwise stated
j
D
/dt
current
100%
50%
90%
30%
0
according to CCITT vol IX-Rec K17.
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
10us
current
ITSM
IT
IH
ID
Symmetric BOD
VT
700us
Symbol
VD
I(BR)
V(BR)
voltage
V(BO)
IS
CONDITIONS
V
V
time
(DM)
D
= 0 V; f = 1 kHz to 1 MHz
TSM1
= 85% V
)
3
(BR)min
Fig.4. Normalised avalanche breakdown voltage V
Fig.3. Maximum permissible non-repetitive on-state
device triggered at the start of each pulse; T
current based on sinusoidal currents; f = 50 Hz;
20
15
10
; T
5
0
1.00
0.90
1.06
1.04
1.02
0.98
0.96
0.94
0.92
1
ITSM / A
j
and V
= 70 ˚C
V(BR)(Tj)
V(BR)(25 C)
-40
(BO)
10
-20
as a function of temperature.
prior to surge.
Number of impulses
0
MIN.
BR211
-
-
100
20
Tj / C
I
40
TYP.
-
-
Product specification
BR211 series
1000
60
MAX.
2000
100
ITSM2
80
time
Rev 1.200
j
10000
100
= 70˚C
UNIT
V/ s
pF
(BR)