SMBT3904PN_07 INFINEON [Infineon Technologies AG], SMBT3904PN_07 Datasheet
SMBT3904PN_07
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SMBT3904PN_07 Summary of contents
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NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN ...
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Thermal Resistance Parameter 1) Junction - soldering point SMBT3904PN SMBT3904UPN Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...
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DC current gain normalized 125 - Total power dissipation P SMBT3904PN ...
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Permissible Pulse Load R SMBT3904PN 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS SMBT3904UPN ...
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Delay time Rise time Fall ...
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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...