CMOSH-4E_10 CENTRAL [Central Semiconductor Corp], CMOSH-4E_10 Datasheet
CMOSH-4E_10
Manufacturer Part Number
CMOSH-4E_10
Description
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE
Manufacturer
CENTRAL [Central Semiconductor Corp]
Datasheet
1.CMOSH-4E_10.pdf
(2 pages)
♦♦
♦♦
♦
♦
♦
♦
♦
♦
MAXIMUM RATINGS: (T A =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I R
I R
BV R
V F
V F
V F
V F
C T
t rr
Enhanced specification.
Additional Enhanced specification.
ENHANCED SPECIFICATION
SILICON SCHOTTKY DIODE
SURFACE MOUNT
TEST CONDITIONS
V R =25V
V R =25V, T A =100°C
I R =100µA
I F =2.0mA
I F =15mA
I F =100mA
I F =200mA
V R =1.0V, f=1.0MHz
I F =I R =10mA, I rr =1.0mA, R L =100Ω
SOD-523 CASE
CMOSH-4E
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-4E is an
Enhanced version of the CMOSH-3 Silicon Schottky
Diode in an SOD-523 Surface Mount Package.
MARKING CODE: 4E
ENHANCED SPECIFICATIONS:
♦
♦
♦
SYMBOL
T J , T stg
V RRM
I FRM
I FSM
Θ JA
MIN
P D
I F from 100mA max to 200mA max.
BV R from 30V min to 40 Vmin.
V F from 1.0V max to 0.8V max.
40
I F
TYP
0.29
0.37
0.61
0.65
7.0
90
25
50
-65 to +150
200
350
750
250
500
40
MAX
0.33
0.42
0.80
500
100
1.0
5.0
w w w. c e n t r a l s e m i . c o m
R2 (25-January 2010)
UNITS
UNITS
°C/W
mW
mA
mA
mA
nA
μA
°C
pF
ns
V
V
V
V
V
V
Related parts for CMOSH-4E_10
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
SURFACE MOUNT SILICON SCHOTTKY DIODE
Manufacturer:
CENTRAL [Central Semiconductor Corp]
Datasheet:
Part Number:
Description:
CMOS-4
Manufacturer:
NEC Electronics
Datasheet:
Part Number:
Description:
CMOS-4
Manufacturer:
NEC Electronics
Datasheet:
Part Number:
Description:
3-VOLT, 0.50-MICRON CMOS GATE ARRAY
Manufacturer:
NEC Electronics
Part Number:
Description:
3-VOLT, 0.50-MICRON CMOS GATE ARRAYS
Manufacturer:
NEC Electronics
Part Number:
Description:
3.3-Volt, 0.5-Micron CMOS Gate Array
Manufacturer:
NEC Electronics
Part Number:
Description:
3.3-VOLT, 0.35-MICRON CMOS GATE ARRAY
Manufacturer:
NEC Electronics
Part Number:
Description:
3.3-Volt, 0.5-Micron CMOS Gate Array
Manufacturer:
NEC Electronics
Part Number:
Description:
CMOS SDRAM Device Operations
Manufacturer:
Samsung Electronics
Datasheet:
Part Number:
Description:
Selecting the Correct CMOS PLD
Manufacturer:
Advanced Micro Devices
Part Number:
Description:
0.5 um CMOS Gate Array
Manufacturer:
NEC Electronics Inc.
Datasheet:
Part Number:
Description:
1.0-MICRON CMOS GATE ARRAYS
Manufacturer:
NEC [NEC]
Datasheet:
CMOSH-4E_10 Summary of contents
Page 1
... Additional Enhanced specification DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH- Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ from 100mA max to 200mA max. ...
Page 2
... CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE (25-January 2010) ...